发明名称 |
STRUCTURE AND METHODS OF FORMING CONTACT STRUCTURES |
摘要 |
Methods and a structure. A method of forming contact structure includes depositing a silicide layer onto a substrate; depositing an electrically insulating layer over a first surface of the silicide layer; forming a via through the insulating layer extending to the first surface; depositing an electrically conductive layer covering a bottom and at least one vertical wall of the via; removing the conductive layer from the bottom; and filling the via with aluminum directly contacting the silicide layer. A structure includes: a silicide layer disposed on a substrate; an electrically insulating layer disposed over the silicide layer; an aluminum plug extending through the insulating layer and directly contacting the silicide layer; and an electrically conductive layer disposed between the plug and the insulating layer. Also included is a method where an aluminum layer grows selectively from a silicide layer and at least one sidewall of a trench.
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申请公布号 |
US2009096108(A1) |
申请公布日期 |
2009.04.16 |
申请号 |
US20070870551 |
申请日期 |
2007.10.11 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
LI YING;WONG KEITH KWONG HON;YANG CHIH-CHAO |
分类号 |
H01L23/48;H01L21/44 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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