Side Surface Light Emitting Semiconductor Element And Method Of Manufacturing The Same

摘要

A side surface light emitting semiconductor element includes: an AlGaN layer doped with Mg at a concentration equal to or less than 5x1019 cm-3; a ridge having a striped shape and formed in an upper portion of a laminated structure which includes the AlGaN layer and an active layer; and a Schottky barrier formed on a top surface of the laminated structure in an area where the ridge is not formed and the AlGaN layer is exposed.