| 摘要 |
<p>The invention relates to a method for making a substrate of the semiconductor on insulator (SeOI) type, comprising an integrated ground plane (5) under the insulating layer (3, 4), this substrate being intended to be used in making electronic components. This method is remarkable in that it comprises the steps of : implanting atoms and/or ions of a metal, in at least one portion of a semiconducting receiver substrate (D, carrying out a heat treatment of said receiver substrate (1) in order to obtain an integrated ground plane (5) on or in at least one portion of said receiver substrate (1), transferring an active layer (23) stemming from a semiconducting donor substrate onto said receiver substrate (1), an insulating layer (3, 4) being inserted in between said donor and receiver (1) substrates, so as to obtain said substrate with an integrated ground plane (5).</p> |
