| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device, which can effectively remove contaminants remaining on a surface after CMP. SOLUTION: An insulating film made of an insulating material is formed on a surface of semiconductor substrate. A surface part of the insulating film is flattened by chemimechanical polishing so that the insulating film covers a whole area of the surface of the semiconductor substrate even after the polishing. The flattened surface of insulating film is immersed in and exposed to a first liquid containing at least one of a first substance selected from a first group consisting of benzotriazole, benzotriazole derivative, and surfactant. COPYRIGHT: (C)2009,JPO&INPIT |
