发明名称 |
BUFFER LAYER FOR FRONT ELECTRODE STRUCTURE IN PHOTOVOLTAIC DEVICE OR THE LIKE |
摘要 |
Certain example embodiments of this invention relate to an electrode structure (e.g., front electrode structure) for use in a photovoltaic device or the like. In certain example embodiments, a buffer layer (e.g., of or including tin oxide) is provided between the front electrode and the semiconductor absorber film in a photovoltaic device. The buffer layer may be deposited via sputtering, and may or may not be doped in certain example instances. In an example context of use in CdS/CdTe photovoltaic devices, the buffer layer is advantageous in that it (one or more of): (a) provides a good work-function match to a possible CdS/CdTe film and the front electrode; (b) provides good durability in that it is better able to withstand attacks of sulfur vapors at elevated temperatures during possible CdS/CdTe processing; (c) may be at least partially conductive; and/or (d) provides good mechanical durability. |
申请公布号 |
WO2008112056(A3) |
申请公布日期 |
2009.04.16 |
申请号 |
WO2008US01875 |
申请日期 |
2008.02.13 |
申请人 |
GUARDIAN INDUSTRIES CORP.;KRASNOV, ALEXEY;LU, YIWEI |
发明人 |
KRASNOV, ALEXEY;LU, YIWEI |
分类号 |
H01L31/0224;H01L31/0392;H01L31/18 |
主分类号 |
H01L31/0224 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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