NONVOLATILE MEMORY DEVICE USING VARIABLE RESISTIVE ELEMENT

摘要

A nonvolatile memory device using resistance material is provided to enhance an integration rate of a phase change memory device by reducing a core layout dimension. A first memory cell block(11) and a second memory cell block(12) include rows and columns of nonvolatile memory cells(MC). The rows are coupled with word lines(WL00~WLm0, WL01~WLm1). The columns are coupled with local bit lines(LBL00~LBL30, LBL01~LBL31). The nonvolatile memory cell includes a variable resistance device and an access device. A common bit line selection block(20) is arranged between the first memory cell block and the second memory cell block, and includes common bit line selection circuits(YP0-C~YP3-C) coupled between the local bit lines and a global bit line(GBL). A first bit line selection block(30) includes first bit line selection circuits(YP0-T~YP3-T) coupled between each local bit line and the global bit line. A second bit line selection block(40) includes second bit line selection circuits(YP0-B~YP3-B) coupled between each local bit line and the global bit line.