发明名称 |
METHODS OF FORMING CARBON-CONTAINING SILICON EPITAXIAL LAYERS |
摘要 |
In a first aspect, a method is provided for forming an epitaxial layer stack on a substrate. The method includes (1) selecting a target carbon concentration for the epitaxial layer stack; (2) forming a carbon-containing silicon layer on the substrate, the carbon-containing silicon layer having at least one of an initial carbon concentration, a thickness and a deposition time selected based on the selected target carbon concentration; and (3) forming a non-carbon-containing silicon layer on the carbon-containing silicon layer prior to etching. Numerous other aspects are provided.
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申请公布号 |
KR20090037468(A) |
申请公布日期 |
2009.04.15 |
申请号 |
KR20097002917 |
申请日期 |
2007.07.31 |
申请人 |
APPLIED MATERIALS INC. |
发明人 |
KIM, YI HWAN;YE ZHIYUAN;ZOJAJI ALI |
分类号 |
H01L21/20;H01L21/4763;H01L21/8234 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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