MULTI BANK TYPE SEMICONDUCTOR MEMORY DEVICE

摘要

A multi bank type semiconductor memory device is provided to secure precharge block area by sharing a plurality of sub bank with one pre-charge block. A sub-bank is stacked to consecutively without the substantial cut-out of data input/output line while comprising one bank. The up bank(110u) and the down bank(110d) share one pre-charge block(150). A free charge controller(160) outputs the signal(LIOpcg UP, LIOpcg DN) controlling an operation of the pre-charge block to the peripheral circuit region of the pre-charge block outer side.