| 摘要 |
An IPS-LCD device and a manufacturing method thereof are provided to solve the wave noise, back-channel contamination and the increment of an active layer thickness by forming an active layer after forming a source electrode and drain electrode. A gate insulating film(205) is formed on a substrate(201). A source electrode(207S) and a drain electrode(207D) are formed on the gate insulating layer and has at least 2-layered or greater structure. The source electrode is protruded from a data line. The drain electrode is separated from the source electrode at a predetermined interval. An active layer is formed on a substrate having the source electrode and drain electrode. The active layer covers sides of the source electrode/drain electrode and a part of the upper part and is patterned so as to cover the gate insulating layer between the source electrode and drain electrode. |
