METHOD OF FORMING ISOLATION LAYER IN SEMICONDUCTOR DEVICE

摘要

A formation method of an element isolation film of a semiconductor device is provided to improve the electrical characteristic of the semiconductor device by preventing the bending of the active area. A formation method of an element isolation film of a semiconductor device includes the stand-by step of a semiconductor substrate(200), the formation step of the first insulating layer(210), and the formation step of the second insulating layer(212). The semiconductor substrate has a trench(207). The first insulating layer is formed at the bottom side of the trench. The second insulating layer is formed on the first insulating layer in order to fill up the trench. The compressive stress of the first insulating layer is smaller than the compressive stress of the second insulating layer.