| 摘要 |
A flash memory device and a manufacturing method thereof are provided to secure a desired coupling ratio by increasing an electrostatic capacity between a floating gate and a control gate. A tunnel insulation film(102) is formed on a top of a semiconductor substrate(100) including a well region, and is made of silicone oxide film. A first conductive film is formed on a top of the tunnel insulation film, and is made of doped poly silicone film in order to form a floating gate of a flash memory device. A first nitrogen-contained insulation film(106) is formed on a top of a device isolation film and a patterned first conductive film, and is made of silicone nitride film having a relative low energy band gap of 5.3eV. A first high dielectric insulation film(108) having a first energy band gap is formed on a top of the first nitrogen-contained insulation film. A second high dielectric insulation film(110) having a second energy band gap is formed on a top of the first high dielectric insulation film. A third high dielectric insulation film(112) having a third energy band gap is formed on a top of the second high dielectric insulation film. A second nitrogen-contained insulation film(114) is formed on a top of the third high dielectric insulation film.
|
