METHOD OF FABRICATING PHASE CHANGE MEMORY DEVICE HAVING A DOPED PHASE CHANGE MATERIAL LAYER
摘要
<p>A manufacturing method of a phase change memory device is provided to have a large difference of a resistance value between phase change patterns of a reset state and phase change patterns of a set state by forming a phase change material film inside a localized structure such as a contact hole without a void. A substrate having an opening part is loaded in a chamber. A first source gas is supplied to the chamber during t1 time(t1). The first source gas is changed into a plasma state in order to form a Ge film by supplying plasma to the chamber. A second source gas is supplied to the chamber during t3 time(t3). A second material film is formed on a top of a doped Ge film. The second source gas is changed into a plasma state by supplying plasma to the chamber. A plasma doping process of dopant is performed during t4 time(t4) shorter than t3 time. A third source gas is supplied to the chamber during t5 time(t5). A third material film is formed on a top of a doped tellurium film. The third source gas is changed into a plasma state by supplying plasma to the chamber.</p>
申请公布号
KR20090036771(A)
申请公布日期
2009.04.15
申请号
KR20070102006
申请日期
2007.10.10
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
LEE, JIN IL;CHO, SUNG LAE;BAE, BYOUNG JAE;PARK, HYE YOUNG;KIM, DO HYUNG