DATA TRANSFER CIRCUIT OF A SEMICONDUCTOR MEMORY DEVICE

摘要

A data transfer circuit of a semiconductor memory device is provided to a secure a sensing margin by controlling the sensing margin by steps. A first sense amplifier(230) is activated by a first enable signal(SA stb 1) and senses and amplifies data delivered from a local input-output line pair(LIO, LIOB). A time sensor(240) produces a second enable signal(SA stb 2) by driving the first enable signal based on the level difference of the output signal(OUT1, OUT1B) of the first sense amplifier. A second sense amplifier(250) is activated by the second enable signal, and it senses and amplifies the output signals of the first sense amplifier, an output driver(260) amplifies the output signals of the second sense amplifier to the CMOS level.