发明名称 |
Silicon-containing film forming composition, silicon-containing film serving as etching mask, substrate processing intermediate, and substrate processing method |
摘要 |
A multilayer resist process comprises forming in sequence an undercoat film, an intermediate film, and a photoresist film on a patternable substrate, and effecting etching in multiple stages. A silicon-containing film forming composition is useful in forming the intermediate film serving as an etching mask, comprising a silicon-containing polymer obtained through hydrolytic condensation of at least one Si-Si bond-containing silane compound having formula: R (6-m) Si 2 X m wherein R is a monovalent hydrocarbon group, X is alkoxy, alkanoyloxy or halogen, and m is 3 to 6. The composition allows the overlying photoresist film to be patterned to a satisfactory profile and has a high etching selectivity relative to organic materials. |
申请公布号 |
EP1788433(A3) |
申请公布日期 |
2009.04.15 |
申请号 |
EP20060255862 |
申请日期 |
2006.11.16 |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
OGIHARA, TSUTOMU;ASANO, TAKESHI;IWABUSHI, MOTOAKI;UEDA, TAKAFUMI |
分类号 |
G03F7/075;G03F7/09;G03F7/11;H01L21/00 |
主分类号 |
G03F7/075 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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