| 摘要 |
An ion beam guide tube is provided to improve a defect due to an accumulation of an electric charge in an insulation position on a semiconductor surface by forming a neutralization electric charge on a wafer surface during an ion injection process. An even end part(48) is formed on a guide tube(16). The guide tube has a tapering shape. Walls(50,54,56) of the guide tube are formed according to a direction of a path of an ion beam(34). A downstream end of the guide tube is wider than an upstream end of the guide tube. The ion beam is radiated through the guide tube. A size of the upstream end is increased in comparison with a normal size of a conventional inlet opening. The guide tube includes a first bottom part and a second top part.
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