发明名称 |
METHODS OF CONTROLLING MORPHOLOGY DURING EPITAXIAL LAYER FORMATION |
摘要 |
A first aspect of the invention provides a method of selectively forming an epitaxial layer on a substrate. The method includes heating the substrate to a temperature of less than about 800°C and employing both silane and dichlorosilane as silicon sources during epitaxial film formation. Numerous other aspects are provided. |
申请公布号 |
KR20090037481(A) |
申请公布日期 |
2009.04.15 |
申请号 |
KR20097003879 |
申请日期 |
2007.07.30 |
申请人 |
APPLIED MATERIALS INC. |
发明人 |
KIM, YI HWAN;LAM ANDREW M. |
分类号 |
H01L21/20;H01L21/36 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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