发明名称 |
ELECTRICAL PASSIVATION OF SILICON-CONTAINING SURFACES USING ORGANIC LAYERS |
摘要 |
Electrical structures and devices may be formed and include an organic passivating layer that is chemically bonded to a silicon-containing semiconductor material to improve the electrical properties of electrical devices. In different embodiments, the organic passivating layer may remain within finished devices to reduce dangling bonds, improve carrier lifetimes, decrease surface recombination velocities, increase electronic efficiencies, or the like. In other embodiments, the organic passivating layer may be used as a protective sacrificial layer and reduce contact resistance or reduce resistance of doped regions. The organic passivation layer may be formed without the need for high-temperature processing. |
申请公布号 |
EP1307919(A4) |
申请公布日期 |
2009.04.15 |
申请号 |
EP20010953457 |
申请日期 |
2001.07.12 |
申请人 |
CALIFORNIA INSTITUTE OF TECHNOLOGY |
发明人 |
LEWIS, NATHAN, S.;ROYEA, WILLIAM |
分类号 |
H01L21/285;H01L21/306;H01L21/312;H01L21/768;H01L23/29;H01L23/31;H01L31/0216;(IPC1-7):H01L23/58;H01L21/31;H01L21/469 |
主分类号 |
H01L21/285 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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