SEMICONDUCTOR DEVICE HAVING RECESSED FIELD REGION AND FABRICATION METHOD THEREOF

摘要

A semiconductor device having a field recess part and a manufacturing method thereof are provided to increase a channel width of an active region by forming a field recess part on a surface of one side of a field region adjacent to the active region. A field region(102) and an active region(104) are formed on a semiconductor substrate(100). The active region is restricted by the field region. The field region is composed of an STI(Shallow Trench Isolation) region including an oxide film in a trench. A field recess part(116) is formed on a surface of one side of the field region adjacent to the active region, and is a part recessed as a fixed depth(d1) from a surface of the active region. A channel width is increased by securing the active region adjacent to the field region.