发明名称
摘要 PROBLEM TO BE SOLVED: To stabilize an operation of a high vacuum pump and prevent break or damage of the high vacuum pump, by providing a process chamber for performing a plasma process with a microwave source, the high vacuum pump, and a microwave preventing member for the high vacuum pump. SOLUTION: A substrate 282 of a microwave preventing member 280 is fixed in front of a pressure adjusting valve 106 in a process chamber via a bolt 284 and a nut 286. The substrate 282 is constituted with, for example, a punching metal where many holes are formed in the central part in a random or a prescribed arrangement. The substrate 282 is bent to absorb distortion caused by thermal expansion to prevent generation of particles. Diameter of the holes in the central part of the substrate 282 can be determined with harmonics of microwave allowing transmission, the microwave and its harmonics are prevented from intruding into a high vacuum pump 108, and the pump is prevented from breaking or damaging. Thus, gas in the process chamber is uniformly exhausted, plasma density is kept uniform, and change of processed depth of a processed object is prevented.
申请公布号 JP4255163(B2) 申请公布日期 2009.04.15
申请号 JP19990119002 申请日期 1999.04.27
申请人 发明人
分类号 H01L21/302;H05H1/46;C23C16/50;C23C16/511;C23F4/00;H01L21/205;H01L21/3065;H01L21/31 主分类号 H01L21/302
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