发明名称 |
NANO-ENABLED MEMORY DEVICES AND ANISOTROPIC CHARGE CARRYING ARRAYS |
摘要 |
<p>Methods and apparatuses for nanoenabled memory devices and anisotropic charge carrying arrays are described. In an aspect, a memory device includes a substrate, a source region of the substrate, and a drain region of the substrate. A population of nanoelements is deposited on the substrate above a channel region, the population of nanolements in one embodiment including metal quantum dots. A tunnel dielectric layer is formed on the substrate overlying the channel region, and a metal migration barrier layer is deposited over the dielectric layer. A gate contact is formed over the thin film of nanoelements. The nanoelements allow for reduced lateral charge transfer. The memory device may be a single or multistate memory device. In a multistate memory device which comprises one or more quantum dots or molecules having a plurality of discrete energy levels, a method is disclosed for charging and/or discharging the device which comprises filling each of the plurality of discrete energy levels of each dot or molecule with one or more electrons, and subsequently removing individual electrons at a time from each discrete energy level of the one or more dots or molecules.</p> |
申请公布号 |
EP1723676(A4) |
申请公布日期 |
2009.04.15 |
申请号 |
EP20050758741 |
申请日期 |
2005.03.09 |
申请人 |
NANOSYS, INC. |
发明人 |
DUAN, XIANGFENG;CHOW, CALVIN, Y., H.;HEALD, DAVID, L.;NIU, CHUNMING;PARCE, J., WALLACE;STUMBO, DAVID, P. |
分类号 |
H01L21/28;G03G5/00;G03G5/02;G03G5/04;G03G5/043;G03G5/08;G03G5/082;G11C11/56;G11C13/02;H01L29/423;H01L29/788 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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