Method of planarizing chalcogenide alloys, in particular for use in phase change memory devices

摘要

A chalcogenide alloy is planarized for forming phase change memories using a slurry which causes reduced damage to the chalcogenide films. The slurry has two different oxidants, a first oxidant having a higher oxidation reduction potential and a second oxidant having a lower oxidation reduction potential. A first oxidant may be hydrogen peroxide; a second oxidant may be potassium nitrate.