| 摘要 |
An etching method for etching an etching object film having a dielectric constant smaller than that of the SiO2 film formed on the object (S) to be processed. The method comprises a step of mounting the object (S) on a susceptor (16) in an evacuatable processing vessel (12), a step of supplying a predetermined etching gas into the processing vessel (12) and converting the etching gas into plasma, and a step of applying high-frequency power of a predetermined frequency as bias power to the susceptor (16) in the presence of the etching gas plasma. The step of applying the high-frequency power as bias power includes a first sub-step of applying high-frequency power of a first frequency as bias power and a second sub-step of applying high-frequency power of a second frequency different from the first one as a bias power.
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