发明名称
摘要 PROBLEM TO BE SOLVED: To provide a PZT-based crystalline film excellent in insulation resistance and dielectric loss and useable for electric parts such as capacitors and actuators. SOLUTION: This PZT-based crystalline film is composed of Pb(ZrxTi1-x)O3 (wherein 0<=x<=1) formed by hydrothermal synthetic method on a substrate. The PZT-based crystalline film is characterized by sealing defective part of the PZT-based crystalline film with a hydrophobic substance.
申请公布号 JP4253970(B2) 申请公布日期 2009.04.15
申请号 JP19990356924 申请日期 1999.12.16
申请人 发明人
分类号 H01L41/187;C01G25/02;C04B35/49;C04B35/491;H01L37/02;H01L41/317;H01L41/39 主分类号 H01L41/187
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