METHOD OF FORMING PHASE CHANGE MATERIAL LAYER USING GE(II) SOURCE, AND METHOD OF FABRICATING PHASE CHANGE MEMORY DEVICE

摘要

A method for forming a phase change material film using a Ge(II) source and a manufacturing method of a phase change memory device are provided to reduce a grain size by reducing a deposition temperature in a phase change material film forming process. A substrate is loaded inside a reaction chamber(S10). The reaction chamber has a cold wall type or a hot wall type. The cold wall type reaction chamber includes a substrate stage having a heating line and a shower head. The hot wall type reaction chamber includes a heating line. A reaction gas is supplied inside the reaction chamber(S20), and has an NH2 group. The reaction gas is one gas selected from groups made of ammonia, primary amine, and hydrazine. A Ge(II) source as a first source is supplied inside the reaction chamber(S30). A second source is supplied inside the reaction chamber(S40). A phase change material film containing Ge is formed on a top part of the substrate(S50).