| 摘要 |
<p>A method for correcting a change of a critical dimension due to flare phenomenon by using an optical proximity correction is provided to secure a process margin in a photolithography process by improving uniformity of a critical dimension. A pattern density on a reticle is calculated according to a region. A total average pattern density of a calculated pattern density is calculated. The calculated pattern density is divided into four regions of 0~25%, 25~50%, 50~75%, and 75~100%. An optical proximity correction model corresponding to a pattern density selected in the four regions is selected. A deviation of a critical dimension corresponding to a difference between the total average pattern density and the pattern density is calculated. A critical dimension of a database about a test pattern is changed. The database about the test pattern is corrected by applying a single optical proximity correction model.</p> |
