| 摘要 |
<p>A method for forming a wafer mark is provided to prevent generation of a bead by removing a photoresist remaining through a cleaning process. A photoresist(20) is coated on a top surface of a wafer(10). The photoresist is removed by irradiating a laser on a photoresist of a forming region of a mark(50) of a wafer. The photoresist is removed by energy of an irradiated laser. An exposed part(22) is formed without damage of the wafer. The mark having a fixed depth and width is formed by performing an etching process using the photoresist as an etch mask. The photoresist is coated on the wafer in a mark forming process. The photoresist positioned on the mark forming region is removed by using the laser. A generation of a bead is prevented in the mark forming process using a wet etching process.</p> |
