发明名称 METHOD FOR FABRICATING POLYSILICON LAYER, METHOD FOR FABRICATING TFT USING IT, AND METHOD FOR FABRICATING ORGANIC ELECTROLUMINESCENT DISPLAY DEVICE
摘要 <p>A method for forming a poly silicone film, a method for forming a thin film transistor, and a method for forming an organic electroluminescent device using the same are provided to satisfy a device uniformity and reliability of a thin film transistor by applying a poly silicone film of a high quality to a poly silicone thin film transistor and a passive matrix organic electroluminescent display device. A protective film(221) is formed on a top of a thin film transistor. A third contact hole is formed by patterning the protective film. A transparent conductive film is deposited on the protective film. A first electrode(223) is formed by patterning the transparent conductive film. A band(225) is formed on a top of a substrate having the first electrode. The first electrode is covered by an organic film(227) including an organic light emitting layer. A second electrode(230) is formed on the substrate including the organic film, and is made of a reflective electrode. The first electrode, the organic film, and the second electrode are formed as an organic electroluminescent device.</p>
申请公布号 KR20090036872(A) 申请公布日期 2009.04.15
申请号 KR20070102158 申请日期 2007.10.10
申请人 LG DISPLAY CO., LTD. 发明人 CHO, DEOG YONG
分类号 H01L21/20;H01L29/786;H01L51/00;H01L51/50 主分类号 H01L21/20
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