SEMICONDUCTOR MEMORY DEVICE HAVING STACK BANKS STRUCTURE

摘要

A semiconductor memory device having a stack bank structure is provided to have global input/output line arrangement and the stack bank structure which reduces the number of formation spaces. A stack bank structure(135) is comprised of a sub bank(130) which is consecutively stacked without disconnection of a specific signal line. A Y-control block is arranged per the stack bank structure and is arranged in one side of the stack bank structure. The Y- control block controls a column related signal of the sub-banks of the stack bank structure.