LIGHT EMITTING DEVICE OF A NITRIDE COMPOUND SEMICONDUCTOR AND THE FABRICATION METHOD THEREOF

摘要

A light emitting device of a nitride compound semiconductor and a fabrication method thereof are provided to reduce the interface blank and the crystallization stress of the substrate and the semiconductor layer. A substrate is located inside a reaction chamber(S1). An InGaN buffer layer is formed on the upper part of substrate(S2). The InGaN buffer layer is formed by using a MOCVD(Metal Organic Chemical Vapor Deposition), a HVPE(Hydride Vapor Phase Epitaxial) or a MBE(Molecular Beam Epitaxial), a MOCVPE(Metal-Organic Chemical Vapor Phase Epitaxial) etc. The InGaN buffer layer has the content on In smaller than the active layer. The u- GaN(undoped-GaN) layer is formed on the top of the InGaN buffer layer(S3). The semiconductor layer of the GaN series having P-N junction is formed in the u-GaN layer(S4). The compound semiconductor layer consisting of the first conductivity type semiconductor layer, the active layer, and the second electrical conduction semiconductor layer is formed(S4). An emitting device is manufactured by forming electrodes on the first conductivity type semiconductor layer and the second electrical conduction semiconductor layer(S5).