| 摘要 |
An apparatus for forming a film for a semiconductor process and a using method thereof are provided to improve yield of a semiconductor device by preventing generation of a particle due to an exfoliation of quartz and a by-product film. An apparatus(1) for forming a film includes a reaction tube(2) of a cylindrical shape. An exhaust pipe(3) for exhausting a gas is formed in a side of a bottom part of the reaction tube. An exhaust part(GE) is connected to the exhaust pipe through an exhaust tube(4). A pressure control unit is arranged on the exhaust part. A cover(5) is arranged on a bottom of the reaction tube, and is moved to top and bottom by a boat elevator. A wafer boat(6) is loaded on a top of the cover. A plurality of semiconductor wafers(W) is loaded in the wafer boat. A heater(7) composed of a resistance heating body is installed around the reaction tube. The heater is arranged inside an insulation cover(71). A gas dispersion nozzle(8,9) and a gas nozzle(16) are inserted in a bottom part of the reaction tube, and are connected to a processing gas supply part(GS) through a mass flow control. A plasma generating part(10) is arranged in one part of a side wall of the reaction tube.
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