| 摘要 |
This invention provides a p-type zinc oxide thin film, which can be clearly proven to be a p-type semiconductor based on the magnetic field dependence of hole voltage by hole effect measurement by hole bar, a method for manufacturing the thin film with good reproduction, and a light emitting element using the thin film. Regarding the preparation of a p-type zinc oxide semiconductor thin film, in order to develop p-type semiconductor properties of zinc oxide, a method for converting zinc oxide to p-type is proposed. The method is characterized by combining the step of annealing a p-type dopant added to a thin film at an elevated temperature to activate the p-type dopant, or applying an active species of a p-type dopant during film formation to dope the p-type dopant in an activated state, with the step of conducting annealing at a low temperature in an oxidizing atmosphere. There are also provided a p-type zinc oxide thin film and a light emitting element realized by the above method. The above constitution can realize the preparation of highly reliable p-type zinc oxide thin film, preparation method thereof, and blue light emitting element using the thin film.
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