PHASE CHANGE MEMORY DEVICES EMPLOYING CELL DIODES AND METHODS OF FABRICATING THE SAME

摘要

A phase change memory device and the manufacturing method are provided to improve the degree of integration by self-aligning phase change material patterns of cell diodes and the diodes by via holes. The interlayer insulating film(14) is formed on the top of the semiconductor substrate(10). The via hole(14h) is formed in the interlayer insulating film. The first and second semiconductor patterns(16n,16p) are successively laminated inside the lower region of the via hole. The phase change material pattern(24') is formed in order to fill up the via hole of the upper part of the cell diode electrode. The bit line(BL1, BL2) having phase change material pattern is formed on the top of substrate. The phase change material pattern within the via hole with the via hole is self-aligned by the first and second semiconductor patterns.