发明名称 |
Method for forming germanides and devices obtained thereof |
摘要 |
The present invention discloses a method for forming germanides on substrates with exposed germanium and exposed dielectric(s) topography, thereby allowing for variations in the germanide forming process. The method comprises the steps of depositing nickel on a substrate having topography, performing a first thermal step to convert substantially all deposited nickel in regions away from the topography into a germanide, selectively removing the unreacted nickel, and performing a second thermal step to lower the resistance of formed germanide.
|
申请公布号 |
US7517765(B2) |
申请公布日期 |
2009.04.14 |
申请号 |
US20060517654 |
申请日期 |
2006.09.08 |
申请人 |
INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM (IMEC);INTEL CORPORATION (INTEL);KATHOLIEKE UNIVERSITEIT LEUVEN (KUL) |
发明人 |
BRUNCO DAVID P.;OPSOMER KARL;DE JAEGER BRICE |
分类号 |
H01L21/336;H01L21/285;H01L21/302;H01L21/3213;H01L21/461 |
主分类号 |
H01L21/336 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|