| 摘要 |
A method to obtain low k dielectric barrier with superior etch resistivity can form the dielectric barrier having the improved etch resistance and the excellent barrier property by improving the dielectric barrier formation process. The cleaning and purging process are performed in the process chamber. The substrate is located inside the process chamber. Precursor is flown to the inside of the process chamber(210). Precursor comprises one or more compounds providing the carbon-carbon bond including the Si-C bond and single carbon-carbon bonding(C-C), the double carbon-carbon bond(C=C), and the threefold carbon-carbon bond or their combination. The RF power causes the reaction of species among the precursor. The RF power causes the low bombardmen preserving the part or the whole of the carbon-carbon bond. Consequently, the carbon-carbon bond containing barrier film is formed on the top of the substrate.
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