发明名称 |
Method and system for forming a nitrided germanium-containing layer using plasma processing |
摘要 |
A method and system for forming a nitrided germanium-containing layer by plasma processing. The method includes providing a germanium-containing substrate in a process chamber, generating a plasma from a process gas containing N2 and a noble gas, where the plasma conditions are selected effective to form plasma excited N2 species while controlling formation of plasma excited N species, and exposing the substrate to the plasma to form a nitrided germanium-containing layer on the substrate. A method is also provided that includes exposing a germanium-containing dielectric layer to liquid or gaseous H2O to alter the thickness and chemical composition of the layer.
|
申请公布号 |
US7517812(B2) |
申请公布日期 |
2009.04.14 |
申请号 |
US20050263402 |
申请日期 |
2005.10.31 |
申请人 |
TOKYO ELECTRON LIMITED;THE BOARD OF TRUSTEES OF THE LELAND STANFORD JUNIOR UNIVERSITY |
发明人 |
SUGAWARA TAKUYA;MCINTYRE PAUL C. |
分类号 |
H01L21/469 |
主分类号 |
H01L21/469 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|