发明名称 MOS type solid-state image pickup device and driving method comprised of a photodiode, a detection portion, and a transfer transistor
摘要 An MOS type solid-state image pickup device including pixels each of which comprises a photodiode PD, a detection portion N and a transfer transistor QT for transferring the charges accumulated in the photodiode PD to the detection portion N, wherein the gate voltage of the transfer transistor QT when the charges are accumulated in the photodiode PD is set to a negative.
申请公布号 US7518168(B2) 申请公布日期 2009.04.14
申请号 US20070776293 申请日期 2007.07.11
申请人 SONY CORPORATION 发明人 MABUCHI KEIJI;UENO TAKAHISA
分类号 H01L27/146;H01L27/148;H04N5/335;H04N5/341;H04N5/359;H04N5/361;H04N5/369;H04N5/374;H04N5/3745 主分类号 H01L27/146
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