| 摘要 |
A transistor in semiconductor device and method for manufacturing the same are provided to prevent the channel potential increment of the main gate in the element isolation region of the semiconductor substrate by forming the shielding film. A plurality of active areas(21) is restricted by forming the element isolation film(22) in the element isolation region of the semiconductor substrate. The first mask pattern exposing the trench area is formed on the top of the semiconductor substrate. The trench is created inside the element isolation film by etching the element isolation film. The first mask pattern is removed. The second mask pattern covering the trench reserved area is formed on the top of the doped polysilicon layer. The doped polysilicon layer is etched. The second mask pattern is removed. A plurality of gates(27) is formed in the gate area of the semiconductor substrate. The junction area(28) is formed inside the active area of both sides of the gate.
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