| 摘要 |
In a nonvolatile semiconductor storage device having a plurality of NAND strings, each NAND string includes a memory cell block obtained by connecting a plurality of nonvolatile memory cells in series, a first selection gate transistor connected to a data transfer line contact, and a second selection gate transistor connected to a source line contact. The upper surface of an isolation insulating film between adjacent data transfer line contacts is higher than the major surface of a semiconductor substrate in a device area between the first selection gate transistor and data transfer line contact. Alternatively, the upper surface of an isolation insulating film between adjacent source line contacts is higher than the major surface of the semiconductor substrate in a device area between the second selection gate transistor and source line contact.
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