| 摘要 |
<p>A method of manufacturing the metallic oxide semiconductor field effect transistor(MOSFET) device is provided to refresh characteristic of device by preventing the passing gate effect generated due to the loss of the element isolation film. The semiconductor substrate(300) has the active area including is the gate forming area and element isolation region. The trench is formed within the element isolation region of semiconductor substrate. The first side wall oxide film and the second side wall oxide layer are formed on the top of the front side of the trench. The linear nitride film and linear oxide film are formed on the top of the second side wall oxide layer. The element isolation film(320) is formed inside of the trench including the linear oxide film. The gate(360) is formed on the top of the semiconductor substrate including the protruded active area.</p> |
