TRANSISTOR WITH ASYMMETRY FOR DATA STORAGE CIRCUITRY

摘要

A transistor (22) having a source (30) with higher resistance than its drain (40) is optimal as a pull-up device (20) in a storage circuit (10). The transistor has a source region having a source implant having a source resistance. The source region is not salicided. A control electrode region (50) is adjacent the source region for controlling electrical conduction of the transistor. A drain region (40) is adjacent the control electrode region and opposite the source region. The drain region has a drain implant that is salicided and has a drain resistance. The source resistance is more than the drain resistance because the source region having a physical property that differs from the drain region.