发明名称 Molybdenum-doped indium oxide structures and methods
摘要 Methods of forming transparent conducting oxides and devices formed by these methods are shown. Monolayers that contain indium and monolayers that contain molybdenum are deposited onto a substrate and subsequently processed to form molybdenum-doped indium oxide. The resulting transparent conducting oxide includes properties such as an amorphous or nanocrystalline microstructure. Devices that include transparent conducting oxides formed with these methods have better step coverage over substrate topography and more robust film mechanical properties.
申请公布号 US7517783(B2) 申请公布日期 2009.04.14
申请号 US20070706944 申请日期 2007.02.13
申请人 MICRON TECHNOLOGY, INC. 发明人 AHN KIE Y.;FORBES LEONARD
分类号 H01L21/44;H01L23/52;H01L31/18 主分类号 H01L21/44
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