发明名称 |
Ferroelectric semiconductor memory device and method for reading the same |
摘要 |
A first ferroelectric memory cell and a second ferroelectric memory cell each include a ferroelectric capacitor and a transistor and each store one set of information. A word-line is shared by the first and second ferroelectric memory cells. A first plate line is connected to the first ferroelectric memory cell and a second plate line is connected to the second ferroelectric memory cell. A selection transistor has one end connected to the first and second ferroelectric memory cells and the other end connected to a bit-line.
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申请公布号 |
US7518901(B2) |
申请公布日期 |
2009.04.14 |
申请号 |
US20070877890 |
申请日期 |
2007.10.24 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
SHIGA HIDEHIRO;TAKASHIMA DAISABURO |
分类号 |
G11C11/22;G11C11/24 |
主分类号 |
G11C11/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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