| 发明名称 |
Hafnium silicide target for forming gate oxide film and method for preparation thereof |
| 摘要 |
The present invention relates to a hafnium silicide target for forming a gate oxide film composed of HfSi1.02-2.00. Obtained is a hafnium silicide target superior in workability and embrittlement resistance, and suitable for forming a HfSiO film and HfSiON film that may be used as a high dielectric gate insulation film in substitute for a SiO2 film, and to the manufacturing method thereof.
|
| 申请公布号 |
US7517515(B2) |
申请公布日期 |
2009.04.14 |
| 申请号 |
US20030480319 |
申请日期 |
2003.12.10 |
| 申请人 |
NIPPON MINING & METALS CO., LTD. |
发明人 |
IRUMATA SHUICHI;SUZUKI RYO |
| 分类号 |
C01B21/068;C22C27/00;C23C14/06;C23C14/08;C23C14/34;H01L21/28;H01L21/314;H01L21/316;H01L29/51;H01L29/78 |
主分类号 |
C01B21/068 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
