发明名称 |
Technique for creating different mechanical stress in different channel regions by forming an etch stop layer having differently modified intrinsic stress |
摘要 |
By providing a contact etch stop layer, the stress in channel regions of different transistor types may be effectively controlled, wherein tensile and compressive stress portions of the contact etch stop layer may be obtained by well-established processes, such as wet chemical etch, plasma etch, ion implantation, plasma treatment and the like. Hence, a significant improvement in transistor performance may be obtained while not significantly contributing to process complexity.
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申请公布号 |
US7517816(B2) |
申请公布日期 |
2009.04.14 |
申请号 |
US20050058035 |
申请日期 |
2005.02.15 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
FROHBERG KAI;SCHALLER MATTHIAS;AMINPUR MASSUD |
分类号 |
H01L21/31;H01L21/469;H01L21/8234;H01L21/8238;H01L21/84;H01L27/092;H01L29/772 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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