1-TRANSISTOR TYPE DRAM DRIVING METHOD

摘要

One1-transistor type dram driving method is provided to increase the reliability of a cell and increase read speed since cell data is not broken in read mode. A word line of NMOS transistor is inactivated and data is retained by making a source line and a bit lien precharged at a first hold section. The word line is activated of the NMOS transistor at a combination section after the first hold section. The voltage of the source line and a bit lien is transited the ground voltage and NMOS transistor and bipolar transistor are operated. The world line of the NMOS transistor is inactivated and only the bipolar transistor is operated after the combination section. The source line and the bit line of NMOS transistor are precharged so that data is retained at a second hold section.