HIGH PERFORMANCE SILICONDIODE WITH IMPROVED THERMAL STABILITY

摘要

FIELD: electrics; physics. ^ SUBSTANCE: high performance silicon diode with improved thermal stability includes sequence of emitter layer of first conductivity type, low-reinforced base layer of second conductivity type and high-reinforced layer of second conductivity type with specific resistance lower than that of base layer. Additionally high-reinforced layer of second conductivity type includes area with reinforcement additive concentration lower than in adjoining areas of the layer. Maximum concentration of reinforcement additive in the part of high-reinforcement layer of second conductivity type between additional area and low-reinforcement base layer of second conductivity type is 51018 [cm-3] or higher, and concentration of reinforcement additive within additional area is 21015(Jmax/Jmax 0)[cm-3] or higher, where Jmax [A/cm2] is maximum impulse density of direct current in diode, and Jmax 0 [A/cm2]=1000. ^ EFFECT: positive temperature property of direct voltage through the whole direct current density range. ^ 3 dwg