CHANNEL STRESS ENGINEERING USING LOCALIZED ION IMPLANTATION INDUCED GATE ELECTRODE VOLUMETRIC CHANGE
摘要
<p>A method for fabricating a semiconductor structure uses a volumetric change ion implanted into a volumetric change portion of a gate electrode that is located over a channel region within a semiconductor substrate to form a volume changed portion of the gate electrode located over the channel region within the semiconductor substrate. The volume changed portion of the gate electrode is typically bidirectionally symmetrically graded in a vertical direction. The volume- changed portion of the gate electrode has a first stress that induces a second stress different than the first stress into the channel region of the semiconductor substrate.</p>
申请公布号
WO2009046241(A1)
申请公布日期
2009.04.09
申请号
WO2008US78655
申请日期
2008.10.03
申请人
INTERNATIONAL BUSINESS MACHINES CORPORATION;LUO, ZHIJIONG;ZHU, HUILONG