| 摘要 |
A DRAM cell with a magnetic capacitor is provided to increase operation speed of DRAM by forming a magnetic capacitor on a metal layer. A DRAM cell includes a substrate(100), a transistor(120), and a ceramic capacitor(140). The substrate is comprised of a semiconductor equipped with a main surface(102). The transistor comprises a source area(124) and a drain region(126), and a control gate(122) is separated from the substrate by thin control dielectric(123). A capacitor comprises a dielectric layer(144) formed on the surface of a first electrode layer(142), and the first electrode layer and the second electrode layer(146) are formed on the surface of a dielectric layer. A wire connection unit required for the DRAM cell is arranged in the routing region(180) in which the necessary interconnection is positioned in the DRAM cell between transistor and ceramic.
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