| 摘要 |
<P>PROBLEM TO BE SOLVED: To correct deviation in performance of a transistor associated with a variation in a temperature and a supply voltage in a current mirror circuit that generates a mirror current from a reference current to maintain an optimal working point. <P>SOLUTION: A negative voltage detection circuit includes a temperature detection circuit 31, wherein the dimension sizes of the transistors in first and second MOS transistor circuits 32, 33 constituting a current mirror circuit are changed in accordance with a controlling signal generated in the temperature detection circuit 31. <P>COPYRIGHT: (C)2009,JPO&INPIT |
