| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having MOS transistors, the semiconductor device being capable of suppressing characteristic variation of the MOS transistors below an area pad. SOLUTION: The semiconductor device 10 having MOS transistors and an area pad includes: a semiconductor chip 11 using silicon having a crystal orientation surface <110> as a top surface; a plurality of MOS transistors 12 each having a source region, a gate region, and a drain region in the direction of crystal orientation <110> and formed in the semiconductor chip 11; a plurality of electrode pads 13 for junction formed in two dimensions as the area pad on the semiconductor chip 11; and bumps 14 for junction formed on the plurality of electrode pads 13 for junction. The plurality of electrode pads 13 for junction has their center points arrayed obliquely to the direction of crystal orientation <110>. COPYRIGHT: (C)2009,JPO&INPIT
|
